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參數(shù)資料
| 型號： | TSB1184CPS |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Low Vce(sat) PNP Transistor |
| 中文描述： | 低Vce（sat）PNP晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | TSB1184CPS |
TSB1184
1-1
2003/12 rev. B
TSB1184
Low Vce(sat) PNP Transistor
BV
CEO
= - 50V
Ic = - 3A
V
CE (SAT)
, = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TSB1184CP
Tape & Reel
TO-252
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
- 50V
- 50V
- 6
- 3
- 7 (note 1)
1.0
+150
- 55 to +150
Unit
V
V
V
A
DC
Pulse
TO-252
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
Electrical Characteristics
P
D
T
J
T
STG
W
o
C
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= - 50uA, I
E
= 0
I
C
= - 1mA, I
B
= 0
I
E
= - 50uA, I
C
= 0
V
CB
= - 40V, I
E
= 0
V
EB
= - 4V, I
C
= 0
I
C
/ I
B
= - 2.0A / - 0.2A
V
CE
= - 2V, I
C
= - 1A
V
CE
= - 5V, I
C
= - 100mA,
f = 100MHz
V
CB
= - 10V, f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
- 50
- 50
- 6
--
--
--
120
--
--
--
--
--
--
--
--
--
- 1
- 1
- 0.5
560
--
V
V
V
uA
uA
V
MHz
- 0.3
--
80
Output Capacitance
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
Q
Range
120 - 270
Cob
55
--
pF
R
S
180 - 390
270 - 560
Pin Assignment:
1. Base
2. Collector
3. Emitter
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