參數(shù)資料
型號(hào)： TSB1386CY
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： Low Frequency PNP Transistor
中文描述： 低頻PNP晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 116K
代理商： TSB1386CY
TSB1386
1-4
2003/12 rev. A
TSB1386
Low Frequency PNP Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= - 20V
Ic = - 5A
V
CE (SAT)
, = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TSB1386CP
TO-252
TSB1386CY
Tape & Reel
SOT-89
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
- 30V
- 20V
- 6
- 5
- 10
1
0.5
+150
- 55 to +150
Unit
V
V
V
A
DC
Pulse
TO-252
SOT-89
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS, Duty <= 50%
Electrical Characteristics
T
J
T
STG
o
C
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= - 50uA
I
C
= - 1mA
I
E
= - 50uA
V
CB
= - 20V
V
EB
= - 5V
I
C
/ I
B
= - 4A / - 0.1A
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 6V, I
E
= - 50mA,
f = 30MHz
V
CB
= - 5V, I
E
=0A,f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
- 30
- 20
- 6
82
V
V
V
uA
uA
V
MHz
- 0.5
-0.5
- 1.0
390
120
Output Capacitance
Note : pulse test: pulse width <=350uS, duty cycle <=2%
Classification Of h
FE
Rank
P
Range
82 - 180
Cob
60
pF
Q
R
120 - 270
180 - 390
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