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參數(shù)資料
| 型號(hào)： | TSB1412CP |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Low Vcesat PNP Transistor |
| 中文描述： | 低VCESAT PNP晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | TSB1412CP |
TSB1412
Low Vcesat PNP Transistor
1/4
Version: A07
TO-252
(DPAK)
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-40V
-30V
-5A
-0.5V @ I
C
/ I
B
= -4A / -100mA
Ordering Information
Part No.
TSB1412CP RO
Features
●
●
Low V
CE(SAT)
-0.36 @ I
C
/ I
B
= -4A / -100mA (Typ.)
Complementary part with TSD2118
Structure
●
●
Epitaxial Planar Type
PNP Silicon Transistor
Package
TO-252
Packing
2.5Kpcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
Limit
-40
-30
-6
-5
-10 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
DC
Pulse
Ta=25oC
Tc=25oC
Collector Current
I
C
A
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw=10ms
T
J
T
STG
o
C
o
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(SAT)
*h
FE
Min
-40
-30
-6
--
--
--
180
Typ
--
--
--
--
--
-0.36
--
Max
--
--
--
-0.5
-0.5
-0.5
390
Unit
V
V
V
uA
uA
V
I
C
= -50uA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50uA, I
C
= 0
V
CB
= -25V, I
E
= 0
V
EB
= -5V, I
C
= 0
I
C
/ I
B
= -4A / -100mA
V
CE
= -2V, I
C
= -500mA
V
CE
=-6V, I
C
=-50mA,
f=30MHz
V
CB
= -20V, f=1MHz
Transition Frequency
f
T
--
120
--
MHz
Output Capacitance
* Pulse Test: Pulse Width
≤
380uS, Duty Cycle
≤
2%
Cob
--
60
--
pF
Pin Definition:
1. Base
2. Collector
3. Emitter
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