參數(shù)資料
型號(hào)： TSB1386
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： Low Frequency PNP Transistor
中文描述： 低頻PNP晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 123K
代理商： TSB1386
TSB1386
1-4
2003/12 rev. A
TSB1386
Low Frequency PNP Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= - 20V
Ic = - 5A
V
CE (SAT)
, = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TSB1386CP
TO-252
TSB1386CY
Tape & Reel
SOT-89
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
- 30V
- 20V
- 6
- 5
- 10
1
0.5
+150
- 55 to +150
Unit
V
V
V
A
DC
Pulse
TO-252
SOT-89
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS, Duty <= 50%
Electrical Characteristics
T
J
T
STG
o
C
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= - 50uA
I
C
= - 1mA
I
E
= - 50uA
V
CB
= - 20V
V
EB
= - 5V
I
C
/ I
B
= - 4A / - 0.1A
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 6V, I
E
= - 50mA,
f = 30MHz
V
CB
= - 5V, I
E
=0A,f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
- 30
- 20
- 6
82
V
V
V
uA
uA
V
MHz
- 0.5
-0.5
- 1.0
390
120
Output Capacitance
Note : pulse test: pulse width <=350uS, duty cycle <=2%
Classification Of h
FE
Rank
P
Range
82 - 180
Cob
60
pF
Q
R
120 - 270
180 - 390
相關(guān)PDF資料
PDF描述
TSB1412 Low Vcesat PNP Transistor
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TSB1424A Low Vce(sat) PNP Transistor
TSB1424ACW Low Vce(sat) PNP Transistor
TSB1424ACY Low Vce(sat) PNP Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSB1386_1 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Frequency PNP Transistor
TSB1386CP 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Frequency PNP Transistor
TSB1386CY 功能描述:兩極晶體管 - BJT Low Frequency PNP transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TSB1386CY RM 制造商:SKMI/Taiwan 功能描述:Trans GP BJT PNP 20V 5A 4-Pin(3+Tab) SOT-89 T/R
TSB1386CYRM 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Frequency PNP Transistor
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