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| 型號： | TS86101G2BCGL |
| 廠商： | E2V TECHNOLOGIES PLC |
| 元件分類： | DAC |
| 英文描述： | PARALLEL, WORD INPUT LOADING, 10-BIT DAC, CBGA255 |
| 封裝： | HERMETIC SEALED, CERAMIC, BGA-255 |
| 文件頁數(shù)： | 30/57頁 |
| 文件大?。?/td> | 1030K |
| 代理商： | TS86101G2BCGL |
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36
0992D–BDC–04/09
TS86101G2B
e2v semiconductors SAS 2009
11. Thermal and Moisture Characteristics
Figure 11-1. Simplified Thermal Model for CBGA 255 Package
Notes:
1. Typical values, assuming that the power dissipation is uniform over 25% of the die’s top surface, are extracted from ANSYS
thermal simulation.
2. CBGA 255 package is hermetic.
C/Watt
2.2
2.3
= 0.17 W/cm/C
= 0.02 W/cm/C
= 0.17 W/cm/C
= 0.50 W/cm/C
= 0.95 W/cm/C
Top of lid
C/Watt
0.80C/Watt
0.6
0.8C/Watt
4.1
C/Watt
2.6
C/Watt
0.4
0.3
2.8C/Watt
0.9
0.7
0.4
2.3 C/Watt
Silicon Junction
0.20C/Watt
0.4
4.1
0.80
0.6
2.6
0.8
2.8
0.3
2.2
2.3
0.9
0.7
0.4
Silicon Junction
0.20
Silicon
Junction
3.85C/Watt
Ceramic Package
(top half of thickness)
Silicon Die
62.6 mm
2
Cyanate Ester/Ag Glue
Ceramic Package
(bottom half of thickness)
Balls PbSn
Reduction
(result using SPICE, thermal to
electrical equivalent model)
Case where all bottoms of balls
are connected to infinite heat sink:
Infinite heat sink
at bottom of balls
Infinite heat sink
at bottom of balls
Bottom
center of
package
"Around"
center of
package
"Around"
center of
package
Edge
of
package
(bottom of balls
of 4 x 4 array
at center
which are
under die)
(bottom of 48
balls around
die
footprint)
(bottom of
80 balls
around
die footprint)
(bottom of
111 other
balls which
are peripheral)
Assumptions:
square die 7.91 x 7.91 = 62.6 mm
2,
60
μm thick Cyanate Ester/Ag glue,
0.85 mm ceramic thickness under die,
Sn63Pb37 balls diameter 0.70 mm,
0.65 mm height under bottom of LGA,
21 x 21 mm CLGA
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