參數(shù)資料
型號(hào)： TPS40050PWPRG4
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： 0.2 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16
封裝： GREEN, PLASTIC, HTSSOP-16
文件頁(yè)數(shù)： 17/36頁(yè)
文件大小： 648K
代理商： TPS40050PWPRG4
TPS40050
TPS40051
TPS40053
SLUS540F DECEMBER 2002 REVISED JUNE 2004
www.ti.com
24
DESIGN EXAMPLE
4. Calculate the power losses
Power losses in the high-side MOSFET (Si7860DP) at 24-VIN where switching losses dominate can be
calculated from equation (51).
I
RMS + IO
d
+ 8
0.135
+ 2.93 A
substituting (32) into (31) yields
P
COND + 2.93
2
0.008
(1
) 0.007
(150
* 25)) + 0.129 W
and from equation (33), the switching losses can be determined.
P
SW(fsw) + VIN
I
O
t
SW
f
SW + 24 V
8A
20 ns
300 kHz
+ 1.152 W
The MOSFET junction temperature can be found by substituting equation (35) into equation (34)
T
J + PCOND ) PSW
q
JA ) TA + (0.129 ) 1.152)
40
) 85 + 136OC
5. Calculate synchronous rectifier losses
The synchronous rectifier MOSFET has two (2) loss components, conduction, and diode reverse recovery
losses. The conduction losses are due to IRMS losses as well as body diode conduction losses during the dead
time associated with the anti-cross conduction delay.
The IRMS current through the synchronous rectifier from (36)
I
RMS + IO
1
* d + 8
1
* 0.135 + 7.44 A
RMS
The synchronous MOSFET conduction loss from (31) is:
P
COND + IRMS
2
R
DS(on) + 7.44
2
0.008
(1
) 0.007(150 * 25)) + 0.83 W
The body diode conduction loss from (37) is:
P
DC + 2
I
O
V
FD
t
DELAY
f
SW + 2
8.0 A
0.8 V
100 ns
300 kHz
+ 0.384
The body diode reverse recovery loss from (38) is:
P
RR + 0.5
Q
RR
V
IN
f
SW + 0.5
30 nC
24 V
300 kHz
+ 0.108 W
The total power dissipated in the synchronous rectifier MOSFET from (39) is:
P
SR + PRR ) PCOND ) PDC + 0.108 ) 0.83 ) 0.384 + 1.322 W
The junction temperature of the synchronous rectifier at 85
°C is:
T
J + PSR
q
JA ) TA + (1.322)
40
) 85 + 139oC
In typical applications, paralleling the synchronous rectifier MOSFET with a Schottky rectifier increases the
overall converter efficiency by approximately 2% due to the lower power dissipation during the body diode
conduction and reverse recovery periods.
(51)
(52)
(53)
(54)
(55)
(56)
(57)
(58)
(59)
(60)
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