參數(shù)資料
型號: TPS40050PWPRG4
廠商: TEXAS INSTRUMENTS INC
元件分類: 穩(wěn)壓器
英文描述: 0.2 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16
封裝: GREEN, PLASTIC, HTSSOP-16
文件頁數(shù): 10/36頁
文件大?。?/td> 648K
代理商: TPS40050PWPRG4
TPS40050
TPS40051
TPS40053
SLUS540F DECEMBER 2002 REVISED JUNE 2004
www.ti.com
18
APPLICATION INFORMATION
Minimum Load Resistance
Care must be taken not to load down the output of the error amplifier with the feedback resistor, R2, that is too
small. The error amplifier has a finite output source and sink current which must be considered when sizing R2.
Too small a value does not allow the output to swing over its full range.
R2
(MIN) +
V
C(max)
I
SOURCE (min)
+ 3.5 V
2mA
+ 1750 W
CALCULATING THE BOOST AN BP10 BYPASS CAPACITOR
The BOOST capacitance provides a local, low impedance source for the high-side driver. The BOOST capacitor
should be a good quality, high-frequency capacitor. The size of the bypass capacitor depends on the total gate
charge of the MOSFET and the amount of droop allowed on the bypass capacitor. The BOOST capacitance
is described in equation (29).
C
BOOST +
Qg
DV
(Farads)
The 10-V reference pin, BP10V provides energy for both the synchronous MOSFET and the high-side
MOSFET via the BOOST capacitor. Neglecting any efficiency penalty, the BP10V capacitance is described in
equation (30).
C
BP10 +
Q
gHS ) QgSR
DV
(Farads)
dv/dt INDUCED TURN-ON
MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (VDS) applications. The turn-on is caused
by the capacitor divider that is formed by CGD and CGS. High dv/dt conditions and drain-to-source voltage, on
the MOSFET causes current flow through CGD and causes the gate-to-source voltage to rise. If the
gate-to-source voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large
shoot-through currents. Therefore, the SR MOSFET should be chosen so that the CGD capacitance is smaller
than the CGS capacitance.
(28)
(29)
(30)
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