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參數(shù)資料
| 型號(hào)： | TPS40050PWPRG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.2 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | GREEN, PLASTIC, HTSSOP-16 |
| 文件頁數(shù)： | 11/36頁 |
| 文件大?。?/td> | 648K |
| 代理商： | TPS40050PWPRG4 |
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TPS40050
TPS40051
TPS40053
SLUS540F DECEMBER 2002 REVISED JUNE 2004
www.ti.com
19
A
PPLICATION INFORMATION
HIGH SIDE MOSFET POWER DISSIPATION
The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The
conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The
high-side MOSFET conduction losses are defined by equation (31).
P
COND + IRMS
2
R
DS(on)
1
) TC
R
T
J * 25
O
C
(Watts)
where:
D TCR is the temperature coefficient of the MOSFET RDS(on)
The TCR varies depending on MOSFET technology and manufacturer, but typically ranges between
.0035 ppm/
_C and .010 ppm/_C.
The IRMS current for the high side MOSFET is described in equation (32).
I
RMS + IOUT
d
A
RMS
The switching losses for the high-side MOSFET are descibed in equation (33).
P
SW(fsw) + VIN
I
OUT
t
SW
f
SW (Watts)
where:
D IO is the DC output current
D tSW is the switching rise time, typically < 20 ns
D fSW is the switching frequency
Typical switching waveforms are shown in Figure 13.
UDG02139
I
ANTICROSS
CONDUCTION
SYNCHRONOUS
RECTIFIER ON
BODY DIODE
CONDUCTION
BODY DIODE
CONDUCTION
HIGH SIDE ON
ID1
ID2
IO
SW
0
}
d
1d
Figure 13. Inductor Current and SW Node Waveforms
(31)
(32)
(33)
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