參數(shù)資料
型號: TPS24711DGSR
廠商: Texas Instruments
文件頁數(shù): 23/34頁
文件大小: 2792K
描述: IC CTRLR HOT SWAP 2.5-18V 10MSOP
標(biāo)準(zhǔn)包裝: 1
類型: 熱交換控制器
應(yīng)用: 通用
內(nèi)部開關(guān):
電流限制: 可調(diào)
電源電壓: 2.5 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 10-TFSOP,10-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 10-MSOP
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: 296-28562-6
LIM
SENSE
SNS PL_MIN
IN  MAX
P    R
29.3 W  2 m
4.19 mV (> 3 mV)
V
14 V
-
?/DIV>
?/DIV>
W
=
=
=
PROG
LIM
SENSE
PROG
3125
R
=
P    + R
herefore,
3125
R
=
= 53.15 k
(
)
(    )
(
)
(
)
2
J(MAX)2
MAX
DS(on)
CA
A(MAX)
LIM
JC
2
LIM
T
I
r
R
T
0.8
,
R
herefore,
130 C
12 A
0.002
51 C/W  1.8 C/W
50 C
0.8
29.3 W
q
q
?/DIV>
?/DIV>
-
?/DIV>
?/DIV>
+
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?nbsp -
?/DIV>
W?nbsp   ?/DIV>
-    ?/DIV>
+   ?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
=
?/DIV>
J(MAX)
A(MAX)
DS(on)(MAX)
2
MAX
JA
DS(on)(MAX)
2
T
T
,
I
R
herefore,
150 C  50 C
13.6 m
12 A
51 C/W
q
-
=
?/DIV>
?nbsp -   ?/DIV>
=
=
W
?nbsp  ?/DIV>
TPS24710,TPS24711
TPS24712,TPS24713
www.ti.com
SLVSAL2E JANUARY 2011REVISED NOVEMBER 2013
Next select the on resistance of the transistor, r
DS(on)
. The maximum on-resistance must not generate a voltage
greater then the minimum power-good threshold voltage of 140 mV. Assuming a current limit of 12 A, a
maximum r
DS(on)
of 11.67 m& is required. Also consider the effect of r
DS(on)
upon the maximum operating
temperature T
J(MAX)
of the MOSFET. Equation 6 computes the value of r
DS(on)(MAX)
at a junction temperature of
T
J(MAX)
. Most manufacturers list r
DS(on)(MAX)
at 25癈 and provide a derating curve from which values at other
temperatures can be derived. Compute the maximum allowable on-resistance, r
DS(on)(MAX)
, using Equation 6.
(6)
Taking these factors into consideration, the TI CSD16403Q5 was selected for this example. This transistor has a
V
GS(MAX)
rating of 16 V, a V
DS(MAX)
rating of 25 V, and a maximum r
DS(on)
of 2.8 m?at room temperature. During
normal circuit operation, the MOSFET can have up to 10 A flowing through it. The power dissipation of the
MOSFET equates to 0.24 W and a 9.6癈 rise in junction temperature. This is well within the data sheet limits for
the MOSFET. The power dissipated during a fault (e.g., output short) is far larger than the steady-state power.
The power handling capability of the MOSFET must be checked during fault conditions.
STEP 3. Choose Power-Limit Value, P
LIM
, and R
PROG
MOSFET M
1
dissipates large amounts of power during inrush. The power limit P
LIM
of the TPS24710/11/12/13
should be set to prevent the die temperature from exceeding a short-term maximum temperature, T
J(MAX)2
. The
short-term T
J(MAX)2
could be set as high as 130癈 while still leaving ample margin to the usual manufacturers
rating of 150癈. Equation 7 is an expression for calculating P
LIM
,
(7)
where R
窲C
is the junction-to-case thermal resistance of the MOSFET, r
DS(on)
is the resistance at the maximum
operating temperature, and the factor of 0.8 represents the tolerance of the constant-power engine. For an
ambient temperature of 50癈, the calculated maximum P
LIM
is 29.3 W. From Equation 1, a 53.6-k&, 1% resistor
is selected for R
PROG
(see Equation 8).
(8)
V
SNS-PL_MIN
is the minimum sense voltage during power limit operation. Due to offsets of internal amplifiers,
programmed power limit (P
LIM
) accuracy degrades at low V
SNS-PL_MIN
and could cause start-up issues. To ensure
reliable operation, verify that V
SNS,PL,MIN
> 3 mV using Equation 9.
(9)
Copyright ?20112013, Texas Instruments Incorporated
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Product Folder Links: TPS24710  TPS24711 TPS24712  TPS24713
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