- 您現在的位置：買賣IC網 > PDF目錄373683 > TPC8202 (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI) PDF資料下載
參數資料
| 型號： | TPC8202 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI) |
| 文件頁數： | 1/7頁 |
| 文件大小： | 339K |
| 代理商： | TPC8202 |
TPC8202
2003-02-20
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSVI)
TPC8202
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
2.5-V Gate drive
Small footprint due to small and thin package
Low drain
source ON resistance
High forward transfer admittance : |Y
fs
| = 9 S (typ.)
Low leakage current
: I
DSS
=
1
0 μA (max) (V
DS
= 20 V)
Enhancement
mode
: V
th
= 0.5~
1
.
1
V (V
DS
=
1
0 V, I
D
= 200 μA)
Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
= 4
1
m
(typ.)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
= 20k
Ω
)
V
DGR
20
V
Gate-source voltage
V
GSS
±12
V
D C
(Note 1)
I
D
5
Drain curren
Pulse
(Note 1)
I
DP
20
A
Single-device
operation
(Note 3a)
P
D (1)
1.5
Drain power
dissipation
(t = 10(Note 2a) Single-device value
at dual operation
(Note 3b)
P
D(2)
1.1
W
Single-device
operation
(Note 3a)
P
D (1)
0.75
Drain power
dissipation
(t = 10(Note 2b) Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
32.5
mJ
Avalanche current
(Note 1)
I
AR
5
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
E
AR
0.1
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
相關PDF資料 |
PDF描述 |
|---|---|
| TPC8203 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) |
| TPC8206 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| TPC8208 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| TPC8210 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) |
| TPC8211 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TPC8203 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) |
| TPC8203(TE12L) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R |
| TPC8204 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| TPC8205 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) |
| TPC8206 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
發(fā)布緊急采購，3分鐘左右您將得到回復。