- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373683 > TPC8206 (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) PDF資料下載
參數(shù)資料
| 型號(hào)： | TPC8206 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSII） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 223K |
| 代理商： | TPC8206 |
TPC8206
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
II
)
TPC8206
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 40 m
(typ.)
High forward transfer admittance: |Y
fs
| = 7.0 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
= 60 V)
Enhancement-mode: V
th
=
1
.3 to 2.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
60
V
Drain-gate voltage (R
GS
20 k )
V
DGR
60
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
5
Drain current
Pulse
(Note 1)
I
DP
20
A
Single-device
operation (Note 3a)
P
D (1)
1.5
Drain power
dissipation
(t 10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
P
D (2)
1.0
W
Single-device
operation (Note 3a)
P
D (1)
0.75
Drain power
dissipation
(t 10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
92
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.1
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TPC8208 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| TPC8210 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) |
| TPC8211 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) |
| TPC8301 | Silicon P Channel MOS Type (L2−MOSVI) |
| TPC8302 | Silicon P Channel MOS Type (L2−MOSVI) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPC8206(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET - Tape and Reel |
| TPC8207 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
| TPC8207(TE12L) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 6A 8-Pin SOP T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 20V 6A 8-SOP |
| TPC8207(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH DUAL 20V 6A SOP-8 |
| TPC8207(TE12L,Q,M) | 功能描述:MOSFET N-ch 20V 6A 0.020 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。