參數(shù)資料
型號: TPC8302
廠商: Toshiba Corporation
英文描述: Silicon P Channel MOS Type (L2−MOSVI)
文件頁數(shù): 1/7頁
文件大?。?/td> 450K
代理商: TPC8302
TPC8302
2002-05-17
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
π
MOSVI)
TPC8302
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
z
2.5 V Gate drive
z
Small footprint due to small and thin package
z
Low drain
source ON resistance: R
DS
(ON)
=
1
00 m
(typ.)
z
High forward transfer admittance: |Y
fs
| = 5 S (typ.)
z
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
=
20 V)
z
Enhancement
mode: V
th
=
0.5~
1
.
1
V (V
DS
=
1
0 V, I
D
=
200 μA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
20
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
20
V
Gate
source voltage
V
GSS
±12
V
D C
(Note 1)
I
D
3.5
Drain current
Pulse
(Note 1)
I
DP
14
A
Single-device
operation (Note 3a)
Single-devece value
at dual operation
Single-device
operation (Note 3a)
Single-devece value
at dual operation
P
D (1)
1.5
Drain power
dissipation
(t = 10s)
(Note 2a)
(Note 3b)
P
D (2)
1.0
W
P
D (1)
0.75
Drain power
dissipation
(t = 10s)
(Note 2b)
(Note 3b)
P
D 2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
16
mJ
Avalanche current
I
AR
3.5
A
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
E
AR
0.1
mJ
Channel temperature
T
ch
150
Storage temperature range
T
stg
55
150
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
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