參數(shù)資料
型號: TPC8208
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山型(U型MOSIII)
文件頁數(shù): 1/7頁
文件大?。?/td> 226K
代理商: TPC8208
TPC8208
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
III
)
TPC8208
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 38 m
(typ.)
High forward transfer admittance: |Y
fs
| = 6.3 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
= 20 V)
Enhancement-mode: V
th
= 0.5 to
1
.2 V (V
DS
=
1
0 V, I
D
= 200 μA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
20 k )
V
DGR
20
V
Gate-source voltage
V
GSS
12
V
DC
(Note 1)
I
D
5
Drain current
Pulse
(Note 1)
I
DP
20
A
Single-device
operation (Note 3a)
P
D (1)
1.5
Drain power
dissipation
(t 10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
P
D (2)
1.1
W
Single-device
operation (Note 3a)
P
D (1)
0.75
Drain power
dissipation
(t 10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
16.3
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.1
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
相關(guān)PDF資料
PDF描述
TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
TPC8301 Silicon P Channel MOS Type (L2−MOSVI)
TPC8302 Silicon P Channel MOS Type (L2−MOSVI)
TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPC8208(TE12L,Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 5A 8-Pin SOP T/R 制造商:Toshiba 功能描述:Nch~2 20V 5A 0.05@4V 8SOP(5.5 x 6.0) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 20V 5A 8-SOP 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 5A 8-Pin SOP T/R
TPC8208(TE12L,Q,M) 功能描述:MOSFET N-ch 20V 5A 0.050 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPC8208(TE12LQM) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 5A 8-Pin SOP T/R
TPC8208_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPC8209 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II)