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參數(shù)資料
| 型號(hào)： | TPC8203 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 419K |
| 代理商： | TPC8203 |
TPC8203
2002-05-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U
MOSII)
TPC8203
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
z
Small footprint due to small and thin package
z
Low drain
source ON resistance
z
High forward transfer admittance : |Y
fs
| = 8 S (typ.)
z
Low leakage current
: I
DSS
=
1
0 μA (max) (V
DS
= 30 V)
z
Enhancement
mode
: V
th
= 0.8~2.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
=
1
4 m
(typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
30
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
30
V
Gate
source voltage
V
GSS
±20
V
D C
(Note 1)
I
D
6
Drain current
Pulse
(Note 1)
I
DP
24
A
Single-device
operation (Note 3a)
Single-devece value
at dual operation
Single-device
operation (Note 3a)
Single-devece value
at dual operation
P
D (1)
1.5
Drain power
dissipation
(t = 10 s)
(Note 2a)
(Note 3b)
P
D (2)
1.0
W
P
D (1)
0.75
Drain power
dissipation
(t = 10 s)
(Note 2b)
(Note 3b)
P
D 2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
46.8
mJ
Avalanche current
I
AR
6
A
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
E
AR
0.10
mJ
Channel temperature
T
ch
150
Storage temperature range
T
stg
55
150
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
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|---|---|
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| TPC8204 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
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| TPC8206 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
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