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參數(shù)資料
| 型號： | TPC8104-H |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 327K |
| 代理商： | TPC8104-H |
TPC8104-H
2002-09-11
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U
MOSII)
TPC8104
H
High Speed and High Efficiency DC
DC Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge
: Qg = 17 nC (typ.)
Low drain
source ON resistance : R
DS
(ON)
= 38 m
(typ.)
High forward transfer admittance : |Y
fs
| = 7.0 S (typ.)
Low leakage current : I
DSS
=
10 μA (max) (V
DS
=
30 V)
Enhancement
mode : V
th
=
0.8~
2.0 V (V
DS
=
10 V, I
D
=
1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±20
V
DC
(Note 1)
I
D
5
Drain current
Pulse (Note 1)
I
DP
20
A
Drain power dissipation
(t = 10 s)
(Note 2a)
P
D
2.4
W
Drain power dissipation
(t = 10 s)
(Note 2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
32.5
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.24
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
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| TPC8105-H | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) |
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