參數(shù)資料
型號(hào): TPC8109
廠商: Toshiba Corporation
英文描述: FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
中文描述: 場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 240K
代理商: TPC8109
相關(guān)PDF資料
PDF描述
TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPC8109(TE12L) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 30V 10A 8-Pin SOP T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 30V 10A 8-SOP
TPC8109(TE12L,Q) 功能描述:MOSFET MOSFET P-Ch 30V 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPC8109(TE12L,Q,M) 功能描述:MOSFET MOSFET P-CH 30V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPC8109(TE12LQ) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 30V 10A 8-Pin SOP T/R
TPC8109_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications