參數(shù)資料
型號(hào)： TPC8106-H
廠商： Toshiba Corporation
英文描述： SILICON P CHANNEL MOS TYPE
中文描述： 馬鞍山硅P通道型
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 512K
代理商： TPC8106-H
TPC8106-H
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U
MOSII)
TPC8106
H
High Speed and High Efficiency DC
DC Converters
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
z
Small footprint due to small and thin package
z
High speed switching
z
Small gate charge
z
Low drain
source ON resistance
z
High forward transfer admittance : |Y
fs
| =
1
6.6 S (typ.)
z
Low leakage current : I
DSS
=
1
0 μA (max) (V
DS
=
30 V)
z
Enhancement
mode : V
th
=
0.8~
2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
: Qg = 52 nC (typ.)
: R
DS
(ON)
=
1
4 m
(typ.)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±20
V
DC
(Note 1)
I
D
10
Drain current
Pulse (Note 1)
I
DP
40
A
Drain power dissipation
(t = 10 s)
(Note 2a)
P
D
2.4
W
Drain power dissipation
(t = 10 s)
(Note 2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
130
mJ
Avalanche current
I
AR
10
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.24
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
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