參數(shù)資料
型號： TPC8107
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
中文描述： 東芝場效應晶體管硅P通道馬鞍山型（U型MOSIII）
文件頁數(shù)： 1/7頁
文件大?。?/td> 219K
代理商： TPC8107
TPC8107
2003-02-20
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
III
)
TPC8107
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 5.5 m
(typ.)
High forward transfer admittance: |Y
fs
| = 3
1
S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
=
30 V)
Enhancement-mode: V
th
=
0.8 to
2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
20 k )
V
DGR
30
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
13
Drain current
Pulse (Note 1)
I
DP
52
A
Drain power dissipation
(t 10 s)
(Note 2a)
P
D
1.9
W
Drain power dissipation
(t 10 s)
(Note 2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
219
mJ
Avalanche current
I
AR
13
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.19
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
相關PDF資料
PDF描述
TPC8108 Silicon P Channel MOS Type (U-MOSIII)
TPC8109 FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
相關代理商/技術參數(shù)
參數(shù)描述
TPC8107(TE12L) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 30V 13A 8-Pin SOP T/R
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TPC8107(TE12L,Q,M) 功能描述:MOSFET MOSFET P-Ch 30V 13A Rdson=0.007Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPC8107_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPC8108 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type (U-MOSIII)
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