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參數(shù)資料
| 型號(hào)： | TPC8102 |
| 廠商： | Toshiba Corporation |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 471K |
| 代理商： | TPC8102 |
TPC8102
2002-01-18
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (
π
MOSVI)
TPC8102
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
z
Small footprint due to small and thin package
z
Low drain
source ON resistance
z
High forward transfer admittance : |Y
fs
| = 9 S (typ.)
z
Low leakage current : I
DSS
=
1
0 μA (max) (V
DS
=
30 V)
z
Enhancement
mode : V
th
=
0.8~
2.0 V (V
DS
=
1
0 V, ID =
1
mA)
Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
= 34 m
(typ.)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±20
V
DC
(Note 1)
I
D
6
Drain current
Pulse (Note 1)
I
DP
24
A
Drain power dissipation
(t = 10 s)
(Note 2a)
P
D
2.4
W
Drain power dissipation
(t = 10 s)
(Note 2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
47
mJ
Avalanche current
I
AR
6
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.24
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
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