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參數(shù)資料
| 型號： | TPC8016-H |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（高速U型馬鞍山三） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | TPC8016-H |
TPC8016-H
2003-07-14
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8016-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge: Qg = 48 nc (typ.)
Low drain-source ON resistance: R
DS (ON)
= 3.7 mO (typ.)
High forward transfer admittance: |Y
fs
| = 25 S (typ.)
Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 30 V)
Enhancement-mode: V
th
= 1.1 to 2.3 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
15
Drain current
Pulsed (Note 1)
I
DP
60
A
Drain power dissipation
(t
=
10 s)
(Note 2a)
P
D
1.9
W
Drain power dissipation
(t
=
10 s)
(Note 2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
146
mJ
Avalanche current
I
AR
15
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.19
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPC8017-H | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Effciency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications |
| TPC8017-H(TE12L) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 30V 15A 8-SOP |
| TPC8017-H(TE12L,Q) | 功能描述:MOSFET PW TR N-Ch 30V 15A 1.9W 5.1mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPC8017-H(TE12LQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 30V 15A 8-SOP |
| TPC8017-H(TE12LQM) | 功能描述:MOSFET MOSFET N-Ch 30V 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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