參數(shù)資料
型號(hào): TPC6004
廠商: Toshiba Corporation
英文描述: Notebook PC Applications Portable Equipment Applications Silicon N Channel MOS Type (U-MOSIII)
中文描述: 筆記本電腦應(yīng)用便攜式設(shè)備應(yīng)用硅?頻道馬鞍山型(U型MOSIII)
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 202K
代理商: TPC6004
TPC6004
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6004
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 19 m
(typ.)
High forward transfer admittance: |Y
fs
| = 11 S (typ.)
Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 20 V)
Enhancement mode: V
th
= 0.5 to 1.2 V (V
DS
= 10 V, I
D
= 200 μA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
20
V
Gate-source voltage
V
GSS
±
12
V
DC
(Note 1)
I
D
6
Drain current
Pulse
(Note 1)
I
DP
24
A
Drain power dissipation
(t
=
5 s)
(Note 2a)
P
D
2.2
W
Drain power dissipation
(t
=
5 s)
(Note 2b)
P
D
0.7
W
Single pulse avalanche energy (Note 3)
E
AS
5.8
mJ
Avalanche current
I
AR
3
A
Repetitive avalanche energy (Note 4)
E
AR
0.22
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2a)
R
th (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2b)
R
th (ch-a)
178.5
°C/W
Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6
4
1
2
3
5
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