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參數(shù)資料
| 型號(hào)： | TPC6103 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon P Channel MOS Type (U-MOS III) |
| 中文描述： | 硅P通道馬鞍山型（U型馬鞍山三） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | TPC6103 |
TPC6103
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 29 m
(typ.)
High forward transfer admittance: |Y
fs
| = 13 S (typ.)
Low leakage current: I
DSS
=
10 μA (max) (V
DS
=
12 V)
Enhancement mode: V
th
=
0.5 to
1.2 V
(V
DS
=
10 V,I
D
=
200 μA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
12
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
12
V
Gate-source voltage
V
GSS
±
8
V
DC
(Note 1)
I
D
5.5
Drain current
Pulse (Note 1)
I
DP
22
A
Drain power dissipation
(t
=
5 s)
(Note 2a)
P
D
2.2
W
Drain power dissipation
(t
=
5 s)
(Note 2b)
P
D
0.7
W
Single pulse avalanche energy
(Note 3)
E
AS
5.3
mJ
Avalanche current
I
AR
2.75
A
Repetitive avalanche energy (Note 4)
E
AR
0.22
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient (t
=
5 s)
(Note 2a)
R
th (ch-a)
56.8
°C/W
Thermal resistance, channel to
ambient (t
=
5 s)
(Note 2b)
R
th (ch-a)
178.5
°C/W
Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6
4
1
2
3
5
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