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參數(shù)資料
| 型號： | TPC6201 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSII） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 166K |
| 代理商： | TPC6201 |
TPC6201
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6201
HDD Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 80 m
(typ.)
High forward transfer admittance: |Y
fs
| = 3.8 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1
.3 to 2.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
20 k )
V
DGR
30
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
2.5
Drain
current
Pulse
(Note 1)
I
DP
10
A
Single-device operation
(Note 3a)
P
D
(1)
0.9
Drain power
dissipation
(t 5 s)
dual operation (Note 3b)
P
D
(2)
0.76
W
Single-device operation
(Note 3a)
P
D
(1)
0.4
Drain power
dissipation
(t 5 s)
dual operation (Note 3b)
P
D
(2)
0.31
W
Single pulse avalanche energy (Note 4)
E
AS
1.0
mJ
Avalanche current
I
AR
1.25
A
Repetitive avalanche energy (Note 5)
E
AR
0.16
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device (Note 3a) R
th (ch-a)
(2)
139
Thermal Resistance
(channel-to-ambient)
(t 5 s)
(Note 2a) dual operation (Note 3b) R
th (ch-a)
(2)
165
°C/W
Single-device (Note 3a) R
th (ch-a)
(2)
310
Thermal Resistance
(channel-to-ambient)
(t 5 s)
(Note 2b) dual operation (Note 3b) R
th (ch-a)
(2)
400
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3T1B
Weight: 0.011 g (typ.)
Circuit Configuration
6
4
1
2
3
5
Marking (Note 6)
S 4 A
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