參數(shù)資料
型號： TPC6101
廠商： Toshiba Corporation
英文描述： CONNECTOR ACCESSORY
中文描述： 連接器附件
文件頁數(shù)： 1/7頁
文件大?。?/td> 160K
代理商： TPC6101
TPC6101
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
TPC6101
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 48 m
(typ.)
High forward transfer admittance: |Y
fs
| = 8.2 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
=
20 V)
Enhancement-model: V
th
=
0.5 to
1
.2 V (V
DS
=
1
0 V,
I
D
=
200 μA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
20 k )
V
DGR
20
V
Gate-source voltage
V
GSS
12
V
DC
(Note 1)
I
D
4.5
Drain current
Pulse
(Note 1)
I
DP
18
A
Drain power dissipation
(t 5 s)
(Note 2a)
P
D
2.2
W
Drain power dissipation
(t 5 s)
(Note 2b)
P
D
0.7
W
Single pulse avalanche energy (Note 3)
E
AS
3.3
mJ
Avalanche current
I
AR
2.25
A
Repetitive avalanche energy (Note 4)
E
AR
0.22
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t 5 s)
(Note 2a)
R
th (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient
(t 5 s)
(Note 2b)
R
th (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6
4
1
2
3
5
Marking
(Note 5)
S 3 A
相關PDF資料
PDF描述
TPC6102 CONNECTOR ACCESSORY
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