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參數(shù)資料
| 型號(hào)： | TISP61089BD |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TISP61089B High Voltage Ringing SLIC Protector |
| 中文描述： | TISP61089B高壓振鈴用戶接口保護(hù) |
| 文件頁數(shù)： | 2/22頁 |
| 文件大小： | 411K |
| 代理商： | TISP61089BD |
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (Continued)
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -150 V. The protector gate is
connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will
then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative
supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition.
As the overvoltage subsides, the high holding current of TISP61089B SCR prevents d.c. latchup.
The TISP61089B is intended to be used with a series combination of a 40
or higher resistance and a suitable overcurrent protector. Power
fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For
equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements.
For coordination with a 400 V limit GDT, a minimum series resistor value of 10
is recommended.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The TISP61089B buffered gate design reduces the loading on the SLIC supply during overvoltages
caused by power cross and induction. The TISP61089B is available in a 8-pin plastic small-outline surface mount package.
TISP61089B High Voltage Ringing SLIC Protector
Absolute Maximum Ratings, -40
°
C
≤
TJ
≤
85
°
C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, V
GK
= 0
Repetitive peak gate-cathode voltage, V
KA
= 0
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
V
DRM
V
GKRM
-170
V
-167
V
I
TSP
A
10/1000
μ
s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
5/320
μ
s (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700
μ
s)
10/360
μ
s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
1.2/50
μ
s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
2/10
μ
s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999,
Section 4)
30
40
40
100
T
J
= 25
°
C
120
170
Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3)
I
TSM
A
0.5 s
6.5
1 s
2 s
5 s
30 s
900 s
4.6
3.4
2.3
1.3
0.73
Non-repetitive peak gate current, 1/2
μ
s pulse, cathodes commoned (see Notes 1 and 2)
Operating free-air temperature range
I
GSM
T
A
T
J
T
stg
+40
A
-40 to +85
°
C
°
C
°
C
Junction temperature
-40 to +150
Storage temperature range
-40 to +150
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40
°
C
≤
T
J
≤
85
°
C. The surge may be repeated after the device returns
to its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85
°
C, derate linearly to zero at 150
°
C lead temperature.
3. Values for V
GG
= -100 V. For values at other voltages see Figure 2.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089BDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089BDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089BDR-T | 功能描述:SCR PROTECTOR - PROGRAMMABLE SLIC PROTECT RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089BDS | 制造商:Bourns Inc 功能描述: |
| TISP61089BD-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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