參數(shù)資料
型號(hào)： TISP61089BD
廠商： Electronic Theatre Controls, Inc.
英文描述： TISP61089B High Voltage Ringing SLIC Protector
中文描述： TISP61089B高壓振鈴用戶接口保護(hù)
文件頁數(shù)： 10/22頁
文件大?。?/td> 411K
代理商： TISP61089BD
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
Gated Protectors (Continued)
Summary:
Two tests are needed to verify the protector junctions. Maximum current values for I
GKS
and I
D
are required at the specified applied
voltage conditions.
Testing transistor CB, SCR AK off state and diode reverse blocking:
The highest AK voltage occurs during the overshoot period of the
protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, I
D
,
can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is
shorted during this test (see Figure 11).
0 V
Figure 10. Transistor CB and EB Verification
V
BATH
+ V
FRM
TISP
61089B
AI6XCE
0 V
K
B (G)
I
EB
I
CB
I
GKS
Figure 11. Off-State Current Verification
0 V
AI6XCF
K
B (G)
I
CB
V
(BO)
TISP
61089B
I
D(I)
I
D
A
I
D(I)
is the internal SCR value of I
D
I
R
Figure 12. Typical Application Circuit
TEST
RELAY
RING
RELAY
SLIC
RELAY
TEST
EQUIP-
MENT
RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th1
Th2
Th3
Th4
Th5
SLIC
SLIC
PROTECTOR
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
TISP
3xxxF3
OR
7xxxF3
S3a
S3b
AI6XAJB
V
BATH
TISP
61089B
C1
220 nF
相關(guān)PDF資料
PDF描述
TISP61089BDR TISP61089B High Voltage Ringing SLIC Protector
TISP61089BD-S TISP61089B High Voltage Ringing SLIC Protector
TISP61089BDR-S TISP61089B High Voltage Ringing SLIC Protector
TISP6L7591 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP6L7591DR-S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP61089BDR 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089BDR-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089BDR-T 功能描述:SCR PROTECTOR - PROGRAMMABLE SLIC PROTECT RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089BDS 制造商:Bourns Inc 功能描述:
TISP61089BD-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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