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參數(shù)資料
| 型號： | TIM4450-60SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | LOW INTERMODULATION DISTORTION |
| 中文描述： | 低互調(diào)失真 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 80K |
| 代理商： | TIM4450-60SL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TIM4450-60SL
FEATURES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
HIGH POWER
P1dB=48.0dBm at 4.4GHz to 5.0GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
HIGH GAIN
G1dB=9.5dB at 4.4GHz to 5.0GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended Gate Resistance(Rg) : 28
(Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
SYMBOL
P
1dB
CONDITIONS
UNIT
dBm
MIN. TYP.
47.0
MAX.
48.0
G
1dB
dB
8.5
9.5
I
DS1
G
η
add
IM
3
A
dB
%
dBc
-42
13.2
42
-45
15.0
±
0.8
V
DS
= 10V
f = 4.4 to 5.0GHz
I
DS
set
9.5A
I
DS2
Tch
Two-Tone Test
Po=36.5dBm
(Single Carrier Level)
V
DS
X I
DS
X R
th(c-c)
A
°
C
11.8
100
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 12.0A
V
GSoff
V
DS
=
3V
I
DS
= 200mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -1.0mA
UNIT
S
MIN.
TYP.
20
MAX.
Pinch-off Voltage
V
-1.0
-1.8
-3.0
Saturated Drain Current
A
38
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
0.6
0.8
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Aug. 2003
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