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參數(shù)資料
| 型號(hào)： | TIM5053-35SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 326K |
| 代理商： | TIM5053-35SL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5053-35SL
TECHNICAL DATA
FEAT URES
n
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 35dBm
Single Carrier Level
n
HIGH POWER
P1dB=45.5dBm at 5.0GHz to 5.3GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
I
DS1
Gain Flatness
G
Power Added Efficiency
η
add
3
rd
Order Intermodulation
Distortion
Drain Current
IDS2
Channel Temperature Rise
Tch
n
HIGH GAIN
G1dB=9.0dB at 5.0GHz to 5.3GHz
n
BROAD BAND INTERNALLY MATCHED FET
n
HERMETICALLY SEALED PACKAGE
CONDITIONS
UNIT
dBm
MIN. TYP. MAX.
45.0
45.5
P
1dB
G
1dB
dB
8.0
9.0
A
dB
%
dBc
-42
8.0
39
-45
9.0
±
0.8
VDS=10V
f= 5.0 to 5.3GHz
IM3
Two-Tone Test
Po=35.0dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
A
°
C
8.0
9.0
100
Recommended Gate Resistance(Rg) : 100
W
(Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
Transconductance
CONDITIONS
V
DS
=
3V
I
DS
= 10.5A
V
GSoff
V
DS
=
3V
I
DS
= 140mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -420
μ
A
UNIT
mS
MIN. TYP. MAX.
6500
gm
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
20.0
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.0
1.3
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul.2006
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| TIM5053-4SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 5GHZ, 23W - Trays |
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| TIM5359-16 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| TIM5359-16EL | 制造商:Toshiba America Electronic Components 功能描述:TIM5359-16EL - Trays |
| TIM5359-16SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,5GHZ,75W - Trays |
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