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參數資料
| 型號： | TIM5964-35SLA-251 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET TIM5964-35SLA-251 |
| 中文描述： | 微波功率GaAs場效應管TIM5964 - 35SLA - 251 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | TIM5964-35SLA-251 |
MICROWAVE POWER GaAs FET
MICROWAVE SE MICONDUCTOR
TECHNICAL DATA
FEAT URE S
LOW INTERMODULATION DISTORTION
HIGH EFFICIENCY
IM3=-45 dBc at Po= 35.0dBm,
η
add=39% at 5.9 to 6.75GHz
Single Carrier Level
HIGH GAIN
HIGH POWER
G1dB=8.5dB at 5.9GHz to 6.75GHz
P1dB=45.5dBm at 5.9GHz to 6.75GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
TIM5964-35SLA-251
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg=Rg1(10
)
+
Rg2(18
)= 28
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
SYMBOL
P
1dB
CONDITION
UNIT
dBm
MIN. TYP. MAX.
45.0
45.5
G
1dB
dB
8.0
9.0
I
DS1
G
η
add
IM
3
A
dB
%
dBc
-42
8.0
39
-45
9.0
±
0.8
V
DS
= 10
V
f
= 5.9 – 6.75GHz
I
DS2
Tch
Two Tone Test
Po=35.0dBm
(Single Carrier Level)
V
DS
X
I
DS
X
R
th(c-c)
A
°
C
8.0
9.0
100
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
V
DS
=
3V
I
DS
= 10.5A
V
DS
=
3V
I
DS
= 140mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -
420μ
A
UNIT
mS
MIN.
TYP.
6500
MAX.
Pinch-off Voltage
V
GSoff
V
-1.0
-2.5
-4.0
Saturated Drain Current
I
DSS
A
20
26
Gate-Source Breakdown
Voltage
Thermal Resistance
V
GSO
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.0
1.3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Revised Aug. 2000
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