參數(shù)資料
型號: TH50VSF2580AASB
廠商: Toshiba Corporation
英文描述: GT 5C 5#16 PIN RECP WALL RM
中文描述: SRAM和閃存混合多芯片封裝
文件頁數(shù): 3/50頁
文件大小: 546K
代理商: TH50VSF2580AASB
TH50VSF2580/2581AASB
2001-10-26 3/50
BLOCK DIAGRAM
MODE SELECTION
OPERATION MODE
CEF
S
1
CE
CE2S
OE
WE
RESET
UB
LB
/ACC
WP
DQ0~DQ7 DQ8~DQ15
L
H
X
L
H
H
X
X
X
D
OUT
D
OUT
Flash Read
L
X
L
L
H
H
X
X
X
D
OUT
D
OUT
H
L
H
L
H
H
L
L
X
D
OUT
D
OUT
H
L
H
L
H
H
H
L
X
D
OUT
Hi-Z
SRAM Read
H
L
H
L
H
H
L
H
X
Hi-Z
D
OUT
L
H
X
H
L
H
X
X
X
D
IN
D
IN
Flash Write
L
X
L
H
L
H
X
X
X
D
IN
D
IN
H
L
H
X
L
H
L
L
X
D
IN
D
IN
H
L
H
X
L
H
H
L
X
D
IN
Hi-Z
SRAM Write
H
L
H
X
L
H
L
H
X
Hi-Z
D
IN
X
H
X
H
H
X
X
X
X
Hi-Z
Hi-Z
Flash Output Disable
X
X
L
H
H
X
X
X
X
Hi-Z
Hi-Z
H
X
X
H
H
X
X
X
X
Hi-Z
Hi-Z
SRAM Output Disable
H
X
X
X
X
X
H
H
X
Hi-Z
Hi-Z
Flash Standby
H
X
X
X
X
H
X
X
X
S
S
Flash Hardware
Reset / Standby
X
X
X
X
X
L
X
X
X
S
S
X
H
X
X
X
X
X
X
X
F
F
SRAM Standby
X
X
L
X
X
X
X
X
X
F
F
Notes: L
=
V
IL
; H
=
V
IH
; X
=
V
IH
or V
IL
F
:
Depends on flash memory operation mode.
S
:
Depends on SRAM operation mode.
When CIOS
=
V
CC
and CIOF
=
V
CC
, Word Mode is selected for both SRAM and flash memory.
Does not apply when
CEF
=
S
1
CE
=
V
IL
and CE2S
=
V
IH
at the same time.
4-Mbit
SRAM Memory
32-Mbit
Flash Memory
DQ0~DQ15
A0~A21
A0~A17
V
CCf
V
SS
V
CCs
WE
OE
1
CE
CE2S
UB
CEF
A0~A21
RESET
BY
/
RY
CIOF
S
SA
V
SS
DQ0~DQ15
(DQ0~DQ7)
DQ0~DQ15
(DQ0~DQ7)
LB
CIOS
/ACC
WP
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