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| 型號(hào)： | TH50VSF2580AASB |
| 廠商： | Toshiba Corporation |
| 英文描述： | GT 5C 5#16 PIN RECP WALL RM |
| 中文描述： | SRAM和閃存混合多芯片封裝 |
| 文件頁(yè)數(shù)： | 13/50頁(yè) |
| 文件大?。?/td> | 546K |
| 代理商： | TH50VSF2580AASB |
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TH50VSF2580/2581AASB
2001-10-26 13/50
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RANGE
UNIT
V
CC
V
CCs
/V
CCf
Supply Voltage
Input Voltage
(1)
0.3~4.6
V
V
IN
0.3~4.6
V
V
DQ
Input/Output Voltage
0.5~V
CC
+
0.5 (
≤
4.6)
V
T
opr
Operating Temperature
-40~85
°
C
P
D
Power Dissipation
0.6
W
T
solder
Soldering Temperature (10s)
260
°
C
I
OSHORT
Output Short Circuit Current
(2)
100
mA
N
EW
Erase/Program Cycling Capability
100,000
Cycles
T
stg
Storage Temperature
55~125
°
C
(1)
2.0 V for pulse width
≤
20 ns
(2) Output shorted for no more than one second. No more than one output shorted at a time
HARDWARE SEQUENCE FLAGS
STATUS
DQ7
DQ6
DQ5
DQ3
DQ2
BY
/
RY
Auto Programming
7
DQ
Toggle
0
0
1
0
Read in Program Suspend
(1)
Data
Data
Data
Data
Data
Hi-Z
Selected
(2)
0
Toggle
0
0
Toggle
0
Erase Hold Time
Not-selected
(3)
0
Toggle
0
0
1
0
Selected
0
Toggle
0
1
Toggle
0
In Auto
Erase
Auto
Erase
Not-selected
0
Toggle
0
1
1
0
Selected
1
1
0
0
Toggle
Hi-Z
Read
Not-selected
Data
Data
Data
Data
Data
Hi-Z
Selected
7
DQ
Toggle
0
0
Toggle
0
In Progress
In Erase
Suspend
Programming
Not-selected
7
DQ
Toggle
0
0
1
0
Auto Programming
7
DQ
Toggle
1
0
1
0
Auto
Erase
0
Toggle
1
1
NA
0
Time Limit
Exceeded
Programming in Erase Suspend
7
DQ
Toggle
1
0
NA
0
Notes: DQ outputs cell data and
DQ0 and DQ1 pins are reserved for future use.
0 is output on DQ0, DQ1 and DQ4.
(1) Data output from an address to which Write is being performed are undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
During Auto Chip Erase, all blocks are selected.
(3) Output when a block address not selected for Auto Block Erase of same bank as selected block is specified and data is
read from there.
BY
/
RY
goes High-Impedence when the operation has been completed.
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PDF描述 |
|---|---|
| TH50VSF2581AASB | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:7; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TH50VSF2581AASB | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF2582 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF2582AASB | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF2583AASB | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| TH50VSF3582AASB | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
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