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| 型號： | TH50VSF3582AASB |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 東芝多芯片集成電路硅柵CMOS |
| 文件頁數(shù)： | 1/50頁 |
| 文件大?。?/td> | 548K |
| 代理商： | TH50VSF3582AASB |
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TH50VSF3582/3583AASB
2001-06-08 1/50
Function mode control for flash memory
Compatible with JEDEC-standard commands
Flash memory functions
Simultaneous Read/Write operations
Auto-Program
Auto Chip Erase, Auto Block Erase
Auto Multiple-Block Erase
Program Suspend/Resume
Block-Erase Suspend/Resume
Data Polling/Toggle Bit function
Block Protection/Boot Block Protection
Automatic Sleep, Hidden ROM Area Supports
Common Flash Memory Interface (CFI)
Byte/Word Mode
Erase and Program cycle for flash memory
10
5
cycles (typical)
Boot block architecture for flash memory
TH50VSF3582AASB: Top boot block
TH50VSF3583AASB: Bottom boot block
Package
P-FBGA69-1209-0.80A3: 0.31 g (typ.)
PIN NAMES
TENTATIVE
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
DESCRIPTION
The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a
33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write
or Erase operation. The TH50VSF3582/3583AASB can range from 2.67 V to 3.3 V. The TH50VSF3582/3583AASB is
available in a 69-pin BGA package, making it suitable for a variety of design applications.
FEATURES
Power supply voltage
V
CCs
=
2.67 V~3.3 V
V
CCf
=
2.67 V~3.3 V
Data retention supply voltage
V
CCs
=
1.5 V~3.3 V
Current consumption
Operating: 45 mA maximum (CMOS level)
Standby:
10
μ
A maximum (SRAM CMOS level)
Standby:
10
μ
A maximum (FLASH)
Block erase architecture for flash memory
8
×
8 Kbytes
63
×
64 Kbytes
Organization
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
CIOF
CIOS
Flash Memory
SRAM
V
CC
V
CC
V
SS
V
CC
V
SS
V
SS
2,097,152 words of 16 bits
524,288 words of 16 bits
2,097,152 words of 16 bits
1,048,576 words of 8 bits
4,194,304 words of 8 bits
1,048,576 words of 8 bits
PIN ASSIGNMENT
(TOP VIEW)
Case: CIOF
=
V
CC
, CIOS
=
V
CC
(
×
16,
×
16)
1
2
3
4
5
6
7
8
9
10
A
NC
NC
B
NC
NC
C
NC
A7
LB
/ACC
WP
WE
A8
A11
D
A3
A6
UB
RESET CE2S
A19
A12
A15
E
A2
A5
A18
BY
/
RY
A20
A9
A13
NC
F
NC
A1
A4
A17
A10
A14
NC
NC
G
NC
A0
V
SS
DQ1
DQ6
DU
A16
NC
H
CEF
OE
DQ9
DQ3
DQ4 DQ13 DQ15 CIOF
J
S
1
CE
DQ0 DQ10
V
CCf
V
CCs
DQ12 DQ7
V
SS
K
DQ8
DQ2
DQ11
CIOS
DQ5 DQ14
L
NC
NC
M
NC
NC
A0~A21
A12S
A12F
SA
DQ0~DQ15
S
1
CE
, CE2S Chip Enable Inputs for SRAM
CEF
Chip Enable Input for Flash Memory
OE
Output Enable Input
WE
Write Enable Input
LB
, UB
Data Byte Control Input
BY
/
RY
Ready/Busy Output
RESET
Hardware Reset Input
/ACC
WP
Write Protect/Program Acceleration Input
CIOS
Word Enable Input for SRAM
CIOF
Word Enable Input for Flash Memory
V
CCs
Power Supply for SRAM
V
CCf
Power Supply for Flash Memory
V
SS
Ground
NC
Not Connected
DU
Don’t Use
Address Inputs
A12 Input for SRAM
A12 Input for Flash Memory
A18 Input for SRAM
Data Inputs/Outputs
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
000707EBA2
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| TH50VSF3583AASB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
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