參數(shù)資料
型號(hào)： TH50VSF2580AASB
廠商： Toshiba Corporation
英文描述： GT 5C 5#16 PIN RECP WALL RM
中文描述： SRAM和閃存混合多芯片封裝
文件頁(yè)數(shù)： 11/50頁(yè)
文件大?。?/td> 546K
代理商： TH50VSF2580AASB
TH50VSF2580/2581AASB
2001-10-26 11/50
BLOCK ADDRESS
BANK ADDRESS
ADDRESS RANGE
BANK
#
BLOCK
#
A20 A19 A18 A17 A16 A15 A14 A13 A12
BYTE MODE
WORD MODE
BA63
H
H
H
L
L
L
*
*
*
380000H~38FFFFH
1C0000H~1C7FFFH
BA64
H
H
H
L
L
H
*
*
*
390000H~39FFFFH
1C8000H~1CFFFFH
BA65
H
H
H
L
H
L
*
*
*
3A0000H~3AFFFFH
1D0000H~1D7FFFH
BA66
H
H
H
L
H
H
*
*
*
3B0000H~3BFFFFH
1D8000H~1DFFFFH
BA67
H
H
H
H
L
L
*
*
*
3C0000H~3CFFFFH
1E0000H~1E7FFFH
BA68
H
H
H
H
L
H
*
*
*
3D0000H~3DFFFFH
1E8000H~1EFFFFH
BA69
H
H
H
H
H
L
*
*
*
3E0000H~3EFFFFH
1F0000H~1F7FFFH
BK8
BA70
H
H
H
H
H
H
*
*
*
3F0000H~3FFFFFH
1F8000H~1FFFFFH
相關(guān)PDF資料
PDF描述
TH50VSF2581AASB Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:7; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight
TH50VSF3582AASB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
TH50VSF3583AASB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
TH50VSF3680 0.4W, 75V, 0.3A, SIGNAL DIODE, SOD123
TH50VSF3681AASB GT 10C 10#16 SKT RECP BOX RM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TH50VSF2581AASB 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
TH50VSF2582 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
TH50VSF2582AASB 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
TH50VSF2583AASB 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
TH50VSF3582AASB 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
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