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參數(shù)資料
| 型號(hào)： | TGF4118-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 18 mm Discrete HFET |
| 中文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | TGF4118-EPU |
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
Web: www.triquint.com
9
Application circuit for the TGF4118-EPU at 2.3 GHz
The FET is soldered using AuSn solder at 300 C for 30 secs. Input and Output matching networks are
0.381 mm ZrSn Tioxide substrates (Er = 38). The design load impedance is between 4
and 5
with
the 6 pF output capacitance of the FETincluded in the output network. For further explanation refer to
the application note “Designing High Efficiency Amplifiers using HFETs”
.
The carrier plate is 0.51 mm
gold plated copper molybdenum. Gold wire (0.018 mm) is used for the bonds. Four gate bonds are
required with a length of 0.42 mm. Eight drain bonds are required with a length of 0.42 mm. Bondwire
end points on the FET are in the middle of the bond pads. Refer to the figures above for bondwire
locations. Connection between the 50 ohm line input to the input match is made by a parallel RC
network. R1 in this network is 10 ohms, and C1 is 5.6 pF. The components used are surface mount
0603 piece parts.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF4124 | 24 mm Discrete HFET |
| TGF4124-EPU | 24 mm Discrete HFET |
| TGF4230-SCC | DC - 12 GHz Discrete HFET |
| TGF4230 | 1.2mm Discrete HFET |
| TGF4230-EEU | 1.2mm Discrete HFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF4124 | 功能描述:射頻GaAs晶體管 DC-4.0GHz 10 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF4124-EPU | 制造商:TriQuint Semiconductor 功能描述:DC-4.0GHZ 10 WATT HFET |
| TGF4230 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:1.2mm Discrete HFET |
| TGF4230-EEU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:1.2mm Discrete HFET |
| TGF4230-SCC | 功能描述:射頻GaAs晶體管 DC-12.0GHz 0.7W HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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