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參數(shù)資料
| 型號(hào)： | TGF4118-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 18 mm Discrete HFET |
| 中文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | TGF4118-EPU |
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
Web: www.triquint.com
5
DC probe Parameters
Nominal
Unit
IDSS
Drain Saturation Current
4410
mA
GM
Transconductance
2970
mS
VP
Pinch Off Voltage
-1.85
V
BVGS
Breakdown Voltage Gate-Source
-22
V
BVGD
Breakdown Voltage Gate-Drain
-22
V
0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
2 5 0 0
3 0 0 0
3 5 0 0
4 0 0 0
4 5 0 0
0
1
2
3
4
5
6
7
8
9
D ra in V o lta g e (V )
D
Absolute Maximum Ratings
Drain-to-source Voltage, Vds..............................…………………………………………..........12 V
Gate-to-source Voltage, Vgs..................………………………………………….............-5 V to 0 V
Mounting Temperature.................……………………………………….….........………………320°C
Storage Temperature.....................…………………………………….….............… -65°C to 200°C
Power Dissipation...........…………….………………………………………..refer to Thermal Model
Operating Channel Temperature………………………………………….….refer to Thermal Model
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated in this document is not implied. Exposure to absolute maximum rated conditions for extended
periods of time may affect device reliability.
Example of DC I-V Curves
Vg = 0.0 V to -2.75 V in 0.25 steps T
A
= 25
°
C
DC Characteristics for the TGF4118-EPU
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF4124 | 24 mm Discrete HFET |
| TGF4124-EPU | 24 mm Discrete HFET |
| TGF4230-SCC | DC - 12 GHz Discrete HFET |
| TGF4230 | 1.2mm Discrete HFET |
| TGF4230-EEU | 1.2mm Discrete HFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF4124 | 功能描述:射頻GaAs晶體管 DC-4.0GHz 10 Watt HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF4124-EPU | 制造商:TriQuint Semiconductor 功能描述:DC-4.0GHZ 10 WATT HFET |
| TGF4230 | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:1.2mm Discrete HFET |
| TGF4230-EEU | 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:1.2mm Discrete HFET |
| TGF4230-SCC | 功能描述:射頻GaAs晶體管 DC-12.0GHz 0.7W HFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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