參數(shù)資料
型號(hào): TGF4230-SCC
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 小信號(hào)晶體管
英文描述: DC - 12 GHz Discrete HFET
中文描述: X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
封裝: DIE-4
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 226K
代理商: TGF4230-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
1
DC - 12 GHz Discrete HFET TGF4230-SCC
Key Features and Performance
Nominal Pout of 28.5 dBm at 8.5 GHz
Nominal Gain of 10.0 dB at 8.5 GHz
Nominal PAE of 55 % at 8.5 GHz
1200 μm HFET
0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x
0.004 in)
Bias at 8 Volts, 96 mA
Description
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in
Class A and Class AB operation.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy
attach methods as well as thermocompression and thermosonic wire-bonding processes.
The TGF4230-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the
Millimeter Wave Division.
Primary Applications
Cellular Base Stations
High dynamic-range LNAs
Military and Space
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