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參數(shù)資料
| 型號： | TEA1211 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | High efficiency auto-up/down DC/DC converter |
| 中文描述： | 高效率auto-up/down直流/直流轉換器 |
| 文件頁數(shù)： | 12/23頁 |
| 文件大?。?/td> | 125K |
| 代理商： | TEA1211 |
2003 Oct 13
12
Philips Semiconductors
Preliminary specification
High efficiency auto-up/down
DC/DC converter
TEA1211HN
10 CHARACTERISTICS
T
amb
=
40 to +85
°
C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified.
Notes
1.
2.
3.
Current limit level is defined by the external R
lim
resistor, see Chapter 11.
Measured at T
amb
= 25
°
C.
To avoid additional supply current, it is advised to use HIGH levels not lower than V
IN
0.5 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltage levels
V
OUT
V
IN(start)
output voltage
start voltage
1.50
2.45
2.55
5.50
2.65
V
V
V
OUT
= 3.5 V;
I
load
< 100 mA
V
IN
V
IN(uvlo)
V
FB
V
OUT(wdw)
input voltage
under voltage lockout level
feedback voltage level
output voltage window as
percentage of V
OUT
V
IN(start)
1.20
1.5
V
IN(start)
0.15
1.25
2.0
5.50
1.30
3.0
V
V
V
%
PWM mode
Current levels
I
q
I
shdwn
I
lim
I
max
quiescent current
current in shut-down mode
current limit deviation
maximum continuous
input/output current
no load
30
100
< 1
2
+30
1.7
μ
A
μ
A
%
A
I
lim
= 1 A; note 1
T
amb
< 70
°
C
Power MOSFETs;
note 2
R
DS(on)(N)
R
DS(on)(P)
R
DS(on)(P-up)
pin-to-pin resistance NFETs V
IN
= 3.5 V
pin-to-pin resistance PFETs V
IN
= 3.5 V
pin-to-pin resistance P-up
FET between pins LXB and
OUT
65
65
100
85
85
135
m
m
m
V
OUT
= 1.5 V
Timing
f
sw
f
sync
switching frequency
synchronization input
frequency
PWM mode
450
4.5
600
13
750
20
kHz
MHz
Digital levels: pins SYNC/PWM, SHDWN, SCL and SDA
V
IL
V
IH
Temperature
LOW-level input voltage
HIGH-level input voltage
0
0.6
×
V
IN
0.4
V
IN
+ 0.3
V
V
note 3
T
amb
T
max
ambient temperature
internal cut-off temperature
40
120
+25
135
+85
150
°
C
°
C
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|---|---|
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