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參數(shù)資料
| 型號： | TEA1211 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | High efficiency auto-up/down DC/DC converter |
| 中文描述： | 高效率auto-up/down直流/直流轉(zhuǎn)換器 |
| 文件頁數(shù)： | 11/23頁 |
| 文件大小： | 125K |
| 代理商： | TEA1211 |
2003 Oct 13
11
Philips Semiconductors
Preliminary specification
High efficiency auto-up/down
DC/DC converter
TEA1211HN
7.12.5.3
Write Cycle
The I
2
C-bus configuration for the different TEA1211HN write cycles is shown in Fig.10. The word address is an eight bit
value that defines which register is to be accessed next.
handbook, full pagewidth
acknowledgement
from slave
R/W
auto increment
memory word address
MDB010
acknowledgement
from slave
acknowledgement
from slave
n bytes
S
A
SLAVE ADDRESS
A
A
DATA
P
0
WORD ADDRESS
Fig.10 Master transmits to slave receiver (write mode).
S = START condition.
P = STOP condition.
8
LIMITING VALUES
Notes
1.
2.
Human Body Model: equivalent to discharging a 100 pF capacitor via a 1.5 k
resistor.
Machine Model: equivalent to discharging a 200 pF capacitor via a 0.75
μ
H series inductor.
9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
n
voltage on any pin with respect
to GND
shut-down mode
operational mode
0.5
0.5
40
40
40
+6.0
+5.5
1000
+150
+85
+125
V
V
mW
°
C
°
C
°
C
P
tot
T
j
T
amb
T
stg
V
esd
total internal power dissipation
junction temperature
ambient temperature
storage temperature
electrostatic discharge voltage
pins LXA
note 1
note 2
JEDEC Class II; note 1
JEDEC Class II; note 2
±
800
±
200
±
2000
±
200
V
V
V
V
all other pins
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction
to ambient
mounted on dedicated PCB in
free air
35
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
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