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參數(shù)資料
| 型號： | TEA1201TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.95 V starting basic power unit |
| 中文描述： | 5 A SWITCHING REGULATOR, 720 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 4.40 MM, PLASTIC, MO-152, SOT-369-1, SSOP-16 |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 108K |
| 代理商： | TEA1201TS |
2002 Jun 06
4
Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
5
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC-to-DC converter
U
PCONVERSION
V
I(up)
V
O(up)
V
I(start)
V
O(uvlo)
D
OWNCONVERSION
input voltage
output voltage
start-up input voltage
undervoltage lockout voltage
V
I(start)
V
O(uvlo)
0.93
2.0
0.96
2.2
5.50
5.50
1.00
2.4
V
V
V
V
I
L
< 10 mA
V
I(dwn)
V
O(dwn)
C
URRENT LEVELS
input voltage
output voltage
V
O(uvlo)
1.30
5.50
5.50
V
V
I
q(DCDC)
quiescent current at pin
UPOUT/DNIN
current in shut-down mode
maximum continuous current at
pins LX1 and LX2
current limit deviation
110
μ
A
I
shdwn
I
LX(max)
V
LBI1
= V
I(up)
= 1.2 V
T
amb
= 80
°
C
65
1.0
μ
A
A
I
lim
I
lim
set to 1.0 A
upconversion
downconversion
12
12
+12
+12
%
%
P
OWER
MOSFET
S
R
DSon(N)
drain-to-source on-state
resistance NFET
drain-to-source on-state
resistance PFET
T
j
= 27
°
C; I
DS
= 100 mA
110
200
m
R
DSon(P)
T
j
= 27
°
C; I
DS
=
100 mA
125
250
m
E
FFICIENCY
η
efficiency upconversion
V
O
up to 3.3 V; see Fig.9
V
I
= 1.2 V; I
L
= 100 mA
V
I
= 2.4 V; I
L
= 10 mA
84
92
%
%
T
IMING
f
sw
f
i(sync)
switching frequency
synchronization clock input
frequency
start-up time
PWM mode
480
6
600
13
720
20
kHz
MHz
t
start
Switch
10
ms
R
DSon
drain-to-source resistance in
switched-on state
maximum output current in
switched-on state
V
O(up)
= V
I(down)
= 5 V;
V
FB1
< 0.4 V
V
FB1
< 0.4 V
500
750
m
I
O(max)
0.40
A
General characteristics
V
ref
reference voltage
1.165
1.190
1.215
V
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