參數(shù)資料
型號: TEA1201TS
廠商: NXP SEMICONDUCTORS
元件分類: 穩(wěn)壓器
英文描述: 0.95 V starting basic power unit
中文描述: 5 A SWITCHING REGULATOR, 720 kHz SWITCHING FREQ-MAX, PDSO16
封裝: 4.40 MM, PLASTIC, MO-152, SOT-369-1, SSOP-16
文件頁數(shù): 11/24頁
文件大?。?/td> 108K
代理商: TEA1201TS
2002 Jun 06
11
Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
12 CHARACTERISTICS
T
amb
=
20 to +80
°
C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC-to-DC converter
U
PCONVERSION
;
PIN
U/D = LOW
V
I(up)
V
O(up)
V
I(start)
V
O(uvlo)
D
OWNCONVERSION
;
PIN
U/D = HIGH
input voltage
output voltage
start-up input voltage
undervoltage lockout voltage
V
I(start)
V
O(uvlo)
0.93
2.0
0.96
2.2
5.50
5.50
1.00
2.4
V
V
V
V
I
L
< 10 mA
note 1
V
I(dwn)
V
O(dwn)
R
EGULATION
V
O(wdw)
input voltage
output voltage
note 2
V
O(uvlo)
1.30
5.50
5.50
V
V
output voltage window size as a function
of output voltage
PWM mode
1.5
2.0
2.5
%
C
URRENT LEVELS
I
q(DCDC)
I
shdwn
I
lim(max)
I
lim
quiescent current at pin UPOUT/DNIN
current in shut-down mode
maximum current limit
current limit deviation
note 3
V
LBI1
= V
I(up)
= 1.2 V
110
65
5
μ
A
μ
A
A
I
lim
set to 1.0 A; note 4
upconversion
downconversion
T
amb
= 80
°
C
12
12
+12
+12
1.0
%
%
A
I
LX(max)
maximum continuous current at pins LX1
and LX2
P
OWER
MOSFET
S
R
DSon(N)
R
DSon(P)
E
FFICIENCY
η
drain-to-source on-state resistance NFET
drain-to-source on-state resistance PFET
T
j
= 27
°
C; I
DS
= 100 mA
T
j
= 27
°
C; I
DS
=
100 mA
110
125
200
250
m
m
efficiency upconversion
V
O
upto 3.3 V;seenote 5
and Fig.9
V
I
= 1.2 V; I
L
= 100 mA
V
I
= 2.4 V; I
L
= 10 mA
84
92
%
%
T
IMING
f
sw
f
i(sync)
t
start
D
IGITAL INPUT LEVELS
switching frequency
synchronization clock input frequency
start-up time
PWM mode
480
6
600
13
10
720
20
kHz
MHz
ms
note 6
V
lL(n)
LOW-level input voltage on all digital pins
0
0.4
V
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