參數(shù)資料
型號(hào)： TEA1201TS
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 穩(wěn)壓器
英文描述： 0.95 V starting basic power unit
中文描述： 5 A SWITCHING REGULATOR, 720 kHz SWITCHING FREQ-MAX, PDSO16
封裝： 4.40 MM, PLASTIC, MO-152, SOT-369-1, SSOP-16
文件頁(yè)數(shù)： 12/24頁(yè)
文件大?。?/td> 108K
代理商： TEA1201TS
2002 Jun 06
12
Philips Semiconductors
Product specification
0.95 V starting basic power unit
TEA1201TS
Notes
1.
The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level
is measured at pin UPOUT/DNIN.
When V
I
is lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain
conducting (duty factor is 100%), resulting in V
O
following V
I
.
The quiescent current is specified as the input current in the upconversion configuration at V
I
= 1.20 V and
V
O
= 3.30 V, using L1 = 6.8
μ
H, R1 = 150 k
and R2 = 91 k
.
The current limit is defined by resistor R10. This resistor must have a tolerance of 1%.
The specified efficiency is valid when using an output capacitor having an ESR of 0.1
and an inductor of 6.8
μ
H
with an ESR of 0.05
and a sufficient saturation current level.
The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the
output reaches 3.30 V. The output capacitance equals 100
μ
F, the inductance equals 6.8
μ
H and no load is present.
V
4
is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V
4
1 V, the quiescent current
of the device will increase.
2.
3.
4.
5.
6.
7.
V
IH(n)
HIGH-level input voltage
on pins SYNC/PWM, SHDWN0
and SHDWN2
all other digital input pins
note 7
0.55V
4
V
4
+ 0.3 V
V
4
0.4
V
4
+ 0.3 V
Switch:
see Fig.5
R
DSon
drain-to-source resistance in switched-on
state
maximum output current in switched-on
state
V
O(up)
= V
I(dwn)
= 5 V;
V
FB1
< 0.4 V
V
FB1
< 0.4 V
500
750
m
I
O(max)
0.40
A
Low battery detector
I
LBD
t
t(HL)
D
ETECTION INPUT PIN
LBI1
supply current of detector
transition time
V
I
= 0.9 V
falling V
bat
20
2
μ
A
μ
s
V
det
V
hys
TC
Vdet
TC
Vhys
low battery detection level
low battery detection hysteresis
temperature coefficient of detection level
temperature coefficient of detection
hysteresis
falling V
bat
0.87
0.90
20
0
0.175
0.93
V
mV
mV/K
mV/K
D
ETECTION OUTPUT PIN
LB0
I
O(sink)
General characteristics
output sink current
15
μ
A
V
ref
I
q
T
amb
T
max
reference voltage
quiescent current at pin UPOUT/DNIN
ambient temperature
internal temperature for cut-off
1.165
20
1.190 1.215
270
+25
190
V
μ
A
°
C
°
C
all blocks operating
+80
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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