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參數(shù)資料
| 型號： | TEA1200TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.95 V starting DC-to-DC converter with low battery indicator |
| 中文描述： | 5 A SWITCHING REGULATOR, 720 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 4.40 MM, PLASTIC, MO-152, SOT-369-1, SSOP-16 |
| 文件頁數(shù)： | 3/24頁 |
| 文件大小： | 104K |
| 代理商： | TEA1200TS |
2002 May 14
3
Philips Semiconductors
Product specification
0.95 V starting DC-to-DC converter
with low battery indicator
TEA1200TS
QUICK REFERENCE DATA
Note
1.
The undervoltage lockout level shows wide specification limits since it decreases with increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level
is measured at pin UPOUT/DNIN.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC-to-DC converter
U
PCONVERSION
V
i(up)
V
o(up)
V
i(start)
V
o(uvlo)
D
OWNCONVERSION
input voltage
output voltage
start-up input voltage
undervoltage lockout voltage
V
i(start)
V
o(uvlo)
0.93
2.0
5.50
5.50
1.00
2.4
V
V
V
V
I
L
< 10 mA
note 1
0.96
2.2
V
i(dwn)
V
o(dwn)
C
URRENT LEVELS
input voltage
output voltage
V
o(uvlo)
1.30
5.50
5.50
V
V
I
q(DC/DC)
quiescent current at pin
UPOUT/DNIN
current in shut-down mode
maximum continuous current at
pins LX1 and LX2
current limit deviation
110
μ
A
I
shdwn
I
LX(max)
V
LBI1
= V
I(up)
= 1.2 V
T
amb
= 80
°
C
65
1.0
μ
A
A
I
lim
I
lim
set to 1.0 A
upconversion
downconversion
12
12
+12
+12
%
%
P
OWER
MOSFET
S
R
DSon(N)
drain-to-source on-state resistance
NFET
drain-to-source on-state resistance
PFET
T
j
= 27
°
C; I
DS
= 100 mA
110
200
m
R
DSon(P)
T
j
= 27
°
C; I
DS
= 100 mA
125
250
m
E
FFICIENCY
η
efficiency upconversion
see Fig.8; V
o
up to 3.3 V
V
i
= 1.2 V; I
L
= 100 mA
V
i
= 2.4 V; I
L
= 10 mA
84
92
%
%
T
IMING
f
sw
f
i(sync)
switching frequency
synchronization clock input
frequency
start-up time
PWM mode
480
6
600
13
720
20
kHz
MHz
t
start
General characteristics
10
ms
V
ref
reference voltage
1.165
1.190
1.215
V
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