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參數(shù)資料
| 型號： | TEA1200TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.95 V starting DC-to-DC converter with low battery indicator |
| 中文描述： | 5 A SWITCHING REGULATOR, 720 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 4.40 MM, PLASTIC, MO-152, SOT-369-1, SSOP-16 |
| 文件頁數(shù)： | 10/24頁 |
| 文件大?。?/td> | 104K |
| 代理商： | TEA1200TS |
2002 May 14
10
Philips Semiconductors
Product specification
0.95 V starting DC-to-DC converter
with low battery indicator
TEA1200TS
CHARACTERISTICS
T
amb
=
20 to +80
°
C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC-to-DC converter
U
PCONVERSION
; pin U/D = LOW
V
i(up)
V
o(up)
V
i(start)
V
o(uvlo)
D
OWNCONVERSION
; pin U/D = HIGH
input voltage
output voltage
start-up input voltage
undervoltage lockout voltage
V
i(start)
V
o(uvlo)
0.93
2.0
0.96
2.2
5.50
5.50
1.00
2.4
V
V
V
V
I
L
< 10 mA
note 1
V
i(dwn)
V
o(dwn)
R
EGULATION
V
o(wdw)
input voltage
output voltage
note 2
V
o(uvlo)
1.30
5.50
5.50
V
V
output voltage window size as
a function of output voltage
PWM mode
1.5
2.0
2.5
%
C
URRENT LEVELS
I
q(DC/DC)
quiescent current at pin
UPOUT/DNIN
current in shut-down mode
maximum current limit
current limit deviation
note 3
110
μ
A
I
shdwn
I
lim(max)
I
lim
V
LBI1
= V
I(up)
= 1.2 V
65
5
μ
A
A
I
lim
set to 1.0 A; note 4
upconversion
downconversion
T
amb
= 80
°
C
12
12
+12
+12
1.0
%
%
A
I
LX(max)
maximum continuous current
at pins LX1 and LX2
P
OWER
MOSFET
S
R
DSon(N)
drain-to-source on-state
resistance NFET
drain-to-source on-state
resistance PFET
T
j
= 27
°
C; I
DS
= 100 mA
110
200
m
R
DSon(P)
T
j
= 27
°
C; I
DS
= 100 mA
125
250
m
E
FFICIENCY
η
efficiency upconversion
see Fig.8; V
o
up to 3.3 V;
note 5
V
i
= 1.2 V; I
L
= 100 mA
V
i
= 2.4 V; I
L
= 10 mA
84
92
%
%
T
IMING
f
sw
f
i(sync)
switching frequency
synchronization clock input
frequency
start-up time
PWM mode
480
6
600
13
720
20
kHz
MHz
t
start
note 6
10
ms
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