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參數(shù)資料
| 型號： | TEA1200TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.95 V starting DC-to-DC converter with low battery indicator |
| 中文描述： | 5 A SWITCHING REGULATOR, 720 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 4.40 MM, PLASTIC, MO-152, SOT-369-1, SSOP-16 |
| 文件頁數(shù)： | 11/24頁 |
| 文件大?。?/td> | 104K |
| 代理商： | TEA1200TS |
2002 May 14
11
Philips Semiconductors
Product specification
0.95 V starting DC-to-DC converter
with low battery indicator
TEA1200TS
Notes
1.
The undervoltage lockout level shows wide specification limits since it decreases with increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level
is measured at pin UPOUT/DNIN.
When V
i
is lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain
conducting (duty factor is 100%), resulting in V
o
following V
i
.
The quiescent current is specified as the input current in the upconversion configuration at V
i
= 1.20 V and
V
o
= 3.30 V, using L1 = 6.8
μ
H, R1 = 150 k
and R2 = 91 k
.
The current limit is defined by resistor R10. This resistor must be 1% accurate.
The specified efficiency is valid when using an output capacitor having an ESR of 0.1
and an inductor of 6.8
μ
H
with an ESR of 0.05
and a sufficient saturation current level.
The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the
output reaches 3.30 V. The output capacitance equals 100
μ
F, the inductance equals 6.8
μ
H and no load is present.
V
4
is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V
4
1 V, the quiescent current
of the device will increase.
2.
3.
4.
5.
6.
7.
D
IGITAL INPUT LEVELS
V
lL(n)
LOW-level input voltage on all
digital pins
HIGH-level input voltage
on pins SYNC/PWM,
SHDWN0 and SHDWN2
all other digital input pins
0
0.4
V
V
IH(n)
note 7
0.55V
4
V
4
+ 0.3 V
V
4
0.4
V
4
+ 0.3 V
Low battery detector
t
t(HL)
D
ETECTION INPUT PIN
LBI1
HIGH-to-LOW transition time
falling V
BAT
2
μ
s
V
det(LB)
V
hys(LB)
low battery detection level
low battery detection
hysteresis
temperature coefficient of
detection level
temperature coefficient of
detection hysteresis
falling V
BAT
0.87
0.90
20
0.93
V
mV
TC
Vdet
0
mV/K
TC
Vhys
0.175
mV/K
D
ETECTION OUTPUT PIN
LB0
I
o(sink)
General characteristics
output sink current
15
μ
A
V
ref
I
q
reference voltage
quiescent current at pin
UPOUT/DNIN
ambient temperature
internal temperature for cut-off
1.165
1.190
270
1.215
V
μ
A
all blocks operating
T
amb
T
max
20
+25
190
+80
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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