參數(shù)資料
型號(hào)： TE28F640P30T85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 47/102頁
文件大小： 1609K
代理商： TE28F640P30T85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
47
8.3
Power Supply Decoupling
Flash memory devices require careful power supply de-coupling. Three basic power supply current
considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks
produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the device enable
charge-pumps, and internal logic states change at high speed. All of these internal activities
produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive
and inductive loading. Two-line control and correct de-coupling capacitor selection suppress
transient voltage peaks.
Because Intel
Multi-Level Cell (MLC) flash memory devices draw their power from V
CC
, VPP,
and VCCQ, each power connection should have a 0.1 μF ceramic capacitor to ground. High-
frequency, inherently low-inductance capacitors should be placed as close as possible to package
leads.
Additionally, for every eight devices used in the system, a 4.7 μF electrolytic capacitor should be
placed between power and ground close to the devices. The bulk capacitor is meant to overcome
voltage droop caused by PCB trace inductance.
Figure 27.
Reset Operation Waveforms
(
A) Reset during
read mode
(B) Reset during
program or block erase
P1
≤
P2
(C) Reset during
program or block erase
P1
≥
P2
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RST# [P]
RST# [P]
RST# [P]
Abort
Complete
Abort
Complete
V
CC
0V
V
CC
(D) VCC Power-up to
RST# high
P1
R5
P2
P3
P2
R5
R5
相關(guān)PDF資料
PDF描述
TE28F128P30B85 Intel StrataFlash Embedded Memory
TE28F160B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F160B3-B150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F640P30T85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
TE28F640P33B85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
TE28F640P33T85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
TE28F800B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800B3B110 制造商:Rochester Electronics LLC 功能描述:- Bulk
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