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參數(shù)資料
| 型號(hào)： | TA329Q |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Asymmetric Thyristor |
| 中文描述： | 不對稱晶閘管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 102K |
| 代理商： | TA329Q |
TA329..Q
2/10
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.153
Anode dc
Clamping force 4.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
3.6
4.4
kN
-40
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.04
o
C/W
o
C/W
Cathode dc
-
0.204
o
C/W
Double side cooled
-
0.085
o
C/W
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case
= 125
o
C
I
RRM
Peak reverse current
At V
RRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
≤
5
μ
s.
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
2.5
V
-
30
mA
-
1000
V/
μ
s
-
1000
A/
μ
s
Rate of rise of on-state current
dI/dt
t
q
Max. gate assisted turn-off time
(with feedback diode)
T
= 125
o
C, I
= 200A,
t
p
= 25
μ
s (half sine wave),
V
= DF451 Diode voltage drop,
dV/dt = 600V/
μ
s (linear to 60% V
DRM
),
V
GK
= -5V
7
-
μ
s
I
DRM
Off-state current
At V
DRM
, T
case
= 125
o
C
-
1
mA
Non-repetitive
-
500
A/
μ
s
Repetitive
t
q
Max. turn-off time
(with feedback diode)
T
= 125
o
C, I
TM
= 100A,
t
> 100
μ
s, dI
R
/dt = 30A/
μ
s, V
= 1V,
dV/dt = 600V/
μ
s (linear to 60% V
DRM
),
Gate open.
10
-
μ
s
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