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參數(shù)資料
| 型號： | T35L6464A-5Q |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 64K x 64 SRAM |
| 中文描述： | 64K的× 64的SRAM |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 160K |
| 代理商： | T35L6464A-5Q |
TE
CH
tm
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss..
………... -0.5V to +4.6V
I/O Supply Voltage VccQ .........……..-0.5V to Vcc
VIN (inputs)............................ -0.5V to Vcc +0.5V
Storage Temperature (plastic)...... -55
°
C to +150
°
C
Junction Temperature ...........…................ +150
°
C
Power Dissipation .........................................1.6W
Short Circuit Output Current...................... 100mA
T35L6464A
Taiwan Memory Technology, Inc. reserves the right
P. 7
to change products or specifications without notice.
Publication Date: AUG. 1998
Revision: E
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions above those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C; Vcc = + 3.3V +10%/-5%; unless otherwise noted)
DESCRIPTION
CONDITIONS
Input High (Logic) voltage
Input Low (Logic) voltage
Input Leakage Current
0V
≤
VIN
≤
VCC
Output Leakage Current
Output(s) disabled, 0V
≤
VOUT
≤
VCC
Output High Voltage
IOH = -4.0 mA
Output Low Voltage
IOL = 8.0 mA
Supply Voltage
SYM. MIN
VIH
VIL
ILI
ILO
MAX
VccQ + 0.3
0.8
2
2
UNITS
V
V
μ
A
μ
A
NOTES
1, 2
1, 2
14
2
-0.3
-2
-2
VOH
VOL
Vcc
2.4
3.1
V
V
V
1,11
1,11
1
0.4
3.6
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