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參數(shù)資料
| 型號： | T35L6432A-5Q |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 64K x 32 SRAM |
| 中文描述： | 64K的× 32的SRAM |
| 文件頁數(shù)： | 7/15頁 |
| 文件大?。?/td> | 1347K |
| 代理商： | T35L6432A-5Q |
TE
CH
tm
T35L6432A
Taiwan Memory Technology, Inc. reserves the right
P. 7
to change products or specifications without notice.
Publication Date: DEC. 1998
Revision:A
ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Supply Relative to VSS.
…………-0.5V to +4.6V
I/O Supply Voltage VccQ ........... Vss -0.5V to Vcc
VIN......................................... -0.5V to Vcc +0.5V
Storage Temperature (plastic)...... -55
°
C to +150
°
C
Junction Temperature ..........….................. +150
°
C
Power Dissipation ........................................ 1.6W
Short Circuit Output Current...................... 100mA
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions above those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0
°
C
≤
Ta
≤
70
°
C; VCC = 3.3V +10%/-5% unless otherwise noted)
DESCRIPTION
CONDITIONS
Input High (Logic) voltage
Input Low (Logic) voltage
Input Leakage Current
0V
≤
VIN
≤
VCC
Output Leakage Current
Output(s) disabled, 0V
≤
VOUT
≤
VCC
Output High Voltage
IOH = -4.0 mA
Output Low Voltage
IOL = 8.0 mA
Supply Voltage
SYM.
VIH
VIL
ILI
ILO
MIN
2
-0.3
-2
-2
MAX
UNITS
V
V
μ
A
μ
A
NOTES
1, 2
1, 2
14
VCCQ + 0.3
0.8
2
2
VOH
VOL
Vcc
2.4
V
V
V
1, 11
1, 11
1
0.4
3.6
3.1
M
A
X
DESCRIPTION
Power Supply
Current:
CONDITIONS
SYM.TYP -4.5 -5
Icc
200 300 270 230 190 150
-6
-7
-8
UNITS NOTES
mA
Device selected; all inputs
≤
VIL or
≥
VIH; cycle time
≥
tKC MIN; VCC
= MAX; outputs open
Device selected;
ADSC
,
ADSP
,
ADV
,
GW
,
BWE
≥
VIH; all
other
inputs
≤
VIL or
≥
VIH; VCC = MAX;
cycle time
≥
tKC MIN: outputs open
CMOS Standby Device deselected; VCC = MAX; all ISB2 0.5
inputs
≤
VSS + 0.2 or
≥
VCC - 0.2;
all inputs static; CLK frequency =0
TTL Standby
Device deselected; all inputs
≤
VIL
or
≥
VIH; all inputs static; VCC =
MAX;CLK frequency = 0
Clock Running
Device deselected; all inputs
≤
VIL
or
≥
VIH; VCC =MAX; CLK cycle
time
≥
tKCMIN
3, 12, 13
Operating
Power Supply
Current: Idle
ISB1 56 155 140 125 115 110
mA
12, 13
5
5
5
5
5
mA
12, 13
ISB3 15
ISB4 30
25
25 25
81 76
25
25
mA
12, 13
81
66
51
mA
12, 13
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T35L6432A-5T | 64K x 32 SRAM |
| T35L6432B | 64K x 32 SRAM |
| T35L6432B-10Q | 64K x 32 SRAM |
| T35L6432B-12T | 64K x 32 SRAM |
| T35L6464A | 64K x 64 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T35L6432A-5T | 制造商:TMT 制造商全稱:TMT 功能描述:64K x 32 SRAM |
| T35L6432B | 制造商:TMT 制造商全稱:TMT 功能描述:64K x 32 SRAM |
| T35L6432B-10Q | 制造商:TMT 制造商全稱:TMT 功能描述:64K x 32 SRAM |
| T35L6432B-12T | 制造商:TMT 制造商全稱:TMT 功能描述:64K x 32 SRAM |
| T35L6464A | 制造商:TMT 制造商全稱:TMT 功能描述:64K x 64 SRAM |
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