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參數(shù)資料
| 型號(hào)： | T15V4M16A-70C |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 256K X 16 LOW POWER CMOS STATIC RAM |
| 中文描述： | 256 × 16低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | T15V4M16A-70C |
TE
CH
tm
RECOMMENDED OPERATING CONDITIONS
(Ta = -40
°
C to 85
°
C**)
PARAMETER
Supply Voltage
Preliminary T15V4M16A
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: SEP. 2000
Revision:0.B
SYM
Vcc
V
SS
V
IH
V
IL
MIN
2.7
0.0
2.1
-0.2
TYP
3.0
0.0
-
-
MAX
3.6
0.0
Vcc+0.3
0.6
UNIT
V
V
V
V
Input Voltage
OPERATING CHARACTERISTICS
(Vcc = 2.7 to 3.6V,
V
SS
= 0V, Ta = -40
°
C to 85
°
C)
-55
-70
-100
PARAMETER SYM.
TEST CONDITIONS
Min
Max
Min
Max
Min
Max
UNIT
Input Leakage
Current
I
LI
Vcc = Max,
V
IN
= V
SS
to Vcc
CE
= V
IH
or
OE
= V
IH
or
WE
= V
IL
V
IO
= V
SS
to Vcc
CE
= V
IL
,
WE
=V
IH,
OE
= V
IH
,
V
IN
= V
IH
or V
IL,
I
OUT
=0mA
Cycle time=1us,
100% duty, I
IO
=0mA,
CE
≤
0.2V,
V
IN
≥
V
CC
-0.2V
or V
IN
≤
0.2V
Cycle time=min,
100% duty, I
IO
=0mA,
CE
= V
IL,
V
IN
= V
IH
or V
IL
CE
=
V
IH
or
LB
=
UB
=
V
IH
other input= V
IL
or
V
IH
CE
≥
Vcc-0.2V or
LB
=
UB
≥
Vcc-0.2V,
V
IN
≤
0.2V or
V
IN
≥
Vcc-0.2V
I
OL
= 2.1mA
I
OH
= -1.0 mA
-
1
-
1
-
1
uA
Output Leakage
Current
I
LO
-
1
-
1
-
1
u
A
Operating Power
Supply Current
I
CC
-
3
-
3
-
3
mA
I
CC1
-
5
-
5
-
5
mA
Average Operating
Current
I
CC2
-
45
-
40
-
30
mA
Standby Power
Supply Current
(TTL Level)
I
SB
-
0.3
-
0.3
-
0.3
mA
Standby Power
Supply Current
(CMOS Level)
I
SB1
-
10
-
10
-
10
uA
Output Low Voltage
V
OL
Output High Voltage
V
OH
-
0.4
-
-
0.4
-
-
0.4
-
V
V
2.2
2.2
2.2
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