參數(shù)資料
型號(hào): T15V4M08A-70P
廠商: TM Technology, Inc.
英文描述: 512K X 8 LOW POWER CMOS STATIC RAM
中文描述: 為512k × 8低功耗CMOS靜態(tài)RAM
文件頁數(shù): 8/11頁
文件大?。?/td> 74K
代理商: T15V4M08A-70P
TE
CH
tm
WRITE CYCLE 1
(
WE
Controlled)
Preliminary T15V4M08A
Taiwan Memory Technology, Inc. reserves the right
P. 8
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:0.A
WRITE CYCLE 2
(CE Controlled)
NOTES ( WRITE CYCLE ) :
1. A write occurs during the overlap of a low
CE
, a low WE. A write begins at the lateat transition
among
CE
goes low, WEgoing low. A write end at the earliest transition among
CE
going
high, WE going high. tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of
CE
going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change.
tW C
tWHZ
tDW
DI N
tDH
tWR
tA S
tW P
A d d r e s s
C E
W
E
DO U T
tA W
tC W
tOW
H igh-Z
H i g h - Z
D O N ' T C A R E
U N D E F I N E D
tW C
tD W
DI N
tD H
tW R
tA S
tW P
tC W
A d d r e s s
C E
W
E
DO U T
tA W
H i g h - Z
H i g h - Z
H i g h - Z
相關(guān)PDF資料
PDF描述
T15V4M16A-100C 256K X 16 LOW POWER CMOS STATIC RAM
T15V4M16A 256K X 16 LOW POWER CMOS STATIC RAM
T15V4M16A-55S 256K X 16 LOW POWER CMOS STATIC RAM
T15V4M16A-70C 256K X 16 LOW POWER CMOS STATIC RAM
T16A6CI Bi-Directional Triode Thyristor 16A Mold Triac(AC Power Control Application)(16A三端雙向可控硅開關(guān)元件(交流電源控制應(yīng)用))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T15V4M16A 制造商:TMT 制造商全稱:TMT 功能描述:256K X 16 LOW POWER CMOS STATIC RAM
T15V4M16A-100C 制造商:TMT 制造商全稱:TMT 功能描述:256K X 16 LOW POWER CMOS STATIC RAM
T15V4M16A-55S 制造商:TMT 制造商全稱:TMT 功能描述:256K X 16 LOW POWER CMOS STATIC RAM
T15V4M16A-70C 制造商:TMT 制造商全稱:TMT 功能描述:256K X 16 LOW POWER CMOS STATIC RAM
T15V8M16A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K X 16 LOW POWER CMOS STATIC RAM